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We measured the valence band offset of sputtered ZrSiOx (bandgap 5.9 eV) on InGaZnO4 (IGZO) using X-ray photoelectron spectroscopy and the bandgaps of these materials using either absorption or reflection electron energy loss spectroscopy. This enabled us to additionally derive the conduction band offsets. We examined the effect of venting the samples prior to dielectric deposition on the band offsets...
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