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The wide-bandgap ternary (AlxGa1−x)2O3 forms a heterostructure system with Ga2O3 that is attracting attention for modulation-doped field-effect transistors. The options for gate dielectric on (AlxGa1−x)2O3 are limited by the need for adequate band offsets at the heterointerface. Al2O3 deposited by atomic layer deposition (ALD) is one option due to its large bandgap (6.9 eV). We measured the valence-band...
We measured the band offsets of sputtered Sc2O3 on thin film InGaZnO4 (IGZO) using X-Ray Photoelectron Spectroscopy and obtained the bandgaps of the materials using reflection electron energy loss spectroscopy and UV/Vis absorption. The valence band offset was determined to be −1.33 eV ± 0.13 eV for Sc2O3 on sputtered IGZO (bandgap 3.16 eV). The conduction band offset for Sc2O3/IGZO was then determined...
We have measured the band offsets of sputtered ZrSiO4 on bulk ZnO wafers using X-Ray Photoelectron Spectroscopy and obtained the bandgaps of these two materials using reflection electron energy loss spectroscopy. The valence band offset was determined to be −0.60 eV ± 0.04 eV for ZrSiO4 on ZnO, while the respective bandgaps were 3.22 eV for ZnO and 5.9 eV for ZrSiO4. The conduction band offset for...
We measured the valence band offset of sputtered ZrSiOx (bandgap 5.9 eV) on InGaZnO4 (IGZO) using X-ray photoelectron spectroscopy and the bandgaps of these materials using either absorption or reflection electron energy loss spectroscopy. This enabled us to additionally derive the conduction band offsets. We examined the effect of venting the samples prior to dielectric deposition on the band offsets...
Amorphous InGaZnO 4 (a-IGZO) thin film transistors have been demonstrated on a variety of substrates, including flexible template like paper, tape and polyethylene terephthalate. Charge trapping at the a-IGZO/dielectric interface has been identified as a primary source of instability in these transistors. The valence and conduction band offsets are important parameters of these interfaces...
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