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The development of THz electron devices by coupling time-dependent electron quantum transport and electromagnetism is studied. A novel proposal for a frequency multiplier that generates a 1THz harmonic from a 200GHz input signal is described in detail with numerical simulations. The proposed electron device is a nanoscale double-gate field-effect transistor with a double barrier tunneling structure...
For ballistic (quasi-ballistic) devices, the noise is mainly determined by the rate of injection of electrons from the contacts. Thus, the computation of the noise can be very sensible to the boundary conditions imposed on the simulators. An algorithm for the injection of electrons in nanoscale devices with (or without) electron confinement for degenerate (or non-degenerate) conditions is presented...
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