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Using low-barrier Schottky diodes, a Ka-band high-speed pulsed modulator is designed on a finline geometry .The experimental results present that rise time of modulator is less than 450 ps with modulation depth 20 dB or so.
InAs quantum dots (QDs) grown on In x Ga 1-x As/InP matrix by low pressure metal organic vapor phase epitaxy (LP-MOVPE) in nitrogen ambient were studied. Formation of the InAs QDs with different growth conditions was investigated. To improve the dot size uniformity, a two-step growth method was used and investigated. It is found that morphology of the InAs QDs formed on such In ...
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