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We present the successful fabrication of capacitive micromachined ultrasonic transducers (CMUTs) with an improved insulation layer structure. The goal is to improve device reliability (electrical breakdown) and device performance (reduced parasitic capacitance). The fabrication is based on consecutive thermal oxidation steps, on local oxidation of silicon (LOCOS), and on direct wafer bonding. No chemical-mechanical...
Electrostatic transducers require an electrically insulating structure between their electrodes. In state-of-the-art transducers, such as capacitive (micromachined) ultrasonic transducers (CUTs, CMUTs), this insulating structure is the main limiting factor in terms of device reliability (electrical breakdown, parasitic charging effects) and device performance (thin gap devices with low parasitic capacitance)...
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