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Northrop Grumman Space Technology (NGST) is developing an advanced heterogeneous integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the compound semiconductor materials on silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration...
We report an advanced InP/InGaAs double heterojunction bipolar transistor technology using aggressive scaling in device layout and epitaxial stack. The device employs a 220 Aring highly doped base and a 1200 Aring collector designed to support current densities in excess of 12 mA/mum2. Transistors with emitter width of 0.25-mum have exhibited simultaneous measured fT and fmax frequencies in the...
Submicron InP double heterojunction bipolar transistors (DHBTs) have been designed for increased fmax. These devices have been used to demonstrate single-stage amplifiers at 255 GHz and fundamental oscillators operating at 311 GHz.
We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented
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