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This paper presents design of an improved start-up circuit for a micro scale solar energy harvesting system. A wide input voltage range (270mV–1.8V) start-up circuit that can work in strong as well as weak illumination levels without causing any stress and reliability issues to the CMOS devices has been proposed. The use of native device (zero-Vth) and ultra-low power Band-gap Reference (BGR) helps...
Established RF CMOS switch contains MOSFET in its main architecture with a 5.0 V of control voltage and required high value of resistance in circuitry of transceivers to detect the signal. To avoid the high value of control voltage and those resistances, we proposed a Double-Pole Four-Throw switch using RF CMOS technology and verified its performance interns of currents and switching speed. Also to...
In this paper, we have explored the designing approach of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This proposed CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the...
In this paper, we have designed a Double-Pole Four-Throw (DP4T) RF CMOS switch, using Double-Gate (DG) MOSFET which has a high dielectric Hafnium-dioxide (HfO2) in place of Silicon-dioxide (SiO2). The performance of HfO2 for the switch such as an effective ON-resistance, attenuation, flat-band capacitance, average dynamic power, doping densities, Debye length, and mobility of carriers, barrier heights...
In this paper, we have explored the design features of a Double-Pole Four-Throw (DP4T) RF CMOS switch with use of a novel Vertical Slit Field Effect Transistor (VSFET). This proposed switch circuit uses the double-gate which minimizes the number of transistors and increases the logic density of the transistor per unit area as compare to simple switch. These double gates are independently controlled...
In the wireless telecommunication systems, for increasing interest in RF switch using Complementary Metal Oxide Semiconductor (CMOS) technology, for high frequency is greatly integrated. In this paper, we use the Hafnium-dioxide material as dielectric substrate for designing a model of CMOS which is used for double-gate MOSFET in DP4T RF CMOS switch. This proposed model is compact and robust as well...
In this paper, we have discussed the attenuation with ON resistance, isolation and switching speed of a Double-Pole Four-Throw (DP4T) RF CMOS switch, with properties of symmetric double-gate (DG) MOSFET to make obvious the advantages for DG circuits and reduce the number of transistors which increases the circuit density per unit area in addition to functionality as compare to simple CMOS switch....
To avoid the uses of multiple RF chain associated with the multiple antennas, RF switch is most essential component. Multiple antennas systems are used to replace traditional single antennas circuitry in the radio transceiver system in order to improve the transmission capability and reliability. The desired switching system must have low cost and simple structure, yet still can capture all the advantage...
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