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Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs) and external cavity tunable QD laser have been studied. By optimizing growth parameters and sample structure of InAs QDs, up to 150-nm photoluminescence width is achieved. High-power InAs/GaAs QD-SLDs with the CW output power of 200 mW and the spectral bandwidth of near 60 nm have been obtained at...
A bandgap and intersublevel spacing tuned laser and a broadband quantum dot superluminescent diodes have been realized by using a modulation p-doped InGaAs/GaAs quantum dot structure, which utilises a post-growth annealing process. The intermixed laser exhibits comparable light-current characteristics, indicating little detrimental change to the quantum dot laser material, and show a ground-state...
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