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We present an accurate and robust surface potential based compact model for AlxGa1−xN/AlyGa1−yN/GaN double hetero-junction high electron mobility transistors (DH HEMTs). The effects of band on the carrier distribution and polarization charges are studied in our model, which are characterized by the surface potential equation. An accurate analytical surface potential calculation is used to develop...
A simple method to determine the power dissipation dependent thermal resistance and the junction temperature of a power AlGaN/GaN HEMT proposed. The method is based on a rigorous mathematical treatment of the nonlinear characteristics of thermal resistance. It is hence suitable for modeling of transistors operating at any power densities. This method has been verified by an accurate predicting of...
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