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A new continuous semi-empiric compact model for the current transfer characteristics of surrounding gate undoped polycrystalline silicon (Poly-Si) nanowire (NW) MOSFETs is proposed. The model consists of a single equation based on the Lambert function, which contains only four parameters and is continuously valid and fully differentiable throughout weak and strong conduction regimes of operation....
Two useful applications of the Lambert W function to undoped-body MOSFET modeling are presented. Firstly, it is applied to the problem of inverting the gate voltage versus channel surface potential equation. The result is an exact analytical solution of the channel surface potential as an explicit function of the gate voltage for either n or p channel operation. Additionally an approximate but highly...
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