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The first opto-electronic neural network, employing InGaAs/InP based, multi-quantum well, surface modulator/detector arrays and operating at speeds above 10 Mbit/s is reported. The network uses a novel architecture that has a computer generated holographic weight matrix outside the modulator and detector layers.<<ETX>>
A 4*4 planar array of MQW surface modulators driven by standard high-speed CMOS has been demonstrated in an experimental parallel-interconnect system. Transition times were fast enough for 100 Mbit/s operation and the potential exists to increase array dimensions to include hundreds of devices and transmission rates to many Gbit/s.<<ETX>>
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