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Starting from the strange behaviour of Au used as metallization for GaN/Si SAW devices, a detailed analysis on the effect of metal layers, with different physical properties and thicknesses, on the resonance frequency of the SAWs, is performed.
The morphological analysis is targeted towards a better understanding of the reliability of GaN membranes obtained by micromachining of GaN/Si. These membranes are used as support for devices like FBARs or backside-illuminated UV photodetectors. The deflection analysis is performed on 0.4 μm GaN thin membranes. As result of our investigations, focused on deflection and stress distribution in the membrane,...
The 4G mobile communication systems are expected to work within the 3-6 GHz range. The development, in the last years, of wide band gap (WGB) semiconductor technologies has opened the perspective of manufacturing SAW (surface acoustic wave) and FBAR (film bulk acoustic resonator) devices for application in the GHz frequency range. SAW type structures with a resonance frequency of about 2.8 GHz and...
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