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Double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and photoluminescence (PL) measurements were used to study the effect of post-growth annealing temperature on the structural properties of novel low growth (250°C) and normal growth (450°C) temperature InAs surfactant-mediated grown materials. Under conditions of “arsenic-free” growth, high-quality InAs–GaAs superlattices...
The structural and optical qualities of superlattice InAs–GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250°C) and normal (∼450°C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium beam impinged upon the growth surface (surfactant growth mode). This growth mode still resulted in the...
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