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We demonstrate for the first time contact resistance reduction using dielectric dipole mitigated Schottky barrier height (SBH) tuning on a FinFET source/drain. Different techniques for forming a SiO2/AlOx dipole layer are investigated using diodes. FinFETs, with contacts containing a SBH tuning dipole layer, are also presented. Reduction of the SBH by 100meV from the AlOx/SiO2 dipole results in a...
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