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28nm MTJ for 8∼16Gb MRAM device has been successfully integrated with special patterning & etch technique. Resistance (R) separation between high and low R states was 15.2σ, comparable to that for 80nm MTJ cells. Thermal stability factor (Δ) followed prediction fairly well, and MTJ with free layer (FL) of 25Å and aspect ratio (AR) of 3 showed Δ of 56. In order to realize sub-30nm MRAM device,...
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