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We present a fully reconfigurable fourth-order SOI RF-photonic filter with a tunable bandwidth of 0.9-5 GHz, FSR >; 600 GHz, out-of-band rejection >; 38 dB, and compact size (0.15 mm2) using high-Q resonator-based components.
We present a fully reconfigurable four-pole, four-zero SOI RF photonic filter with a tunable 3dB bandwidth of 0.9 - 5 GHz, more than 38 dB out-of-band rejection, FSR larger than 600 GHz, and compact size (total area 0.15 mm2) using high-Q resonator-based components.
Ultra-high Q (>5 times 105) microdisk resonators are demonstrated in a SiNx platform at 650 nm with integrated in-plane coupling waveguides on a Si substrate. Critical coupling to first-order radial-mode is demonstrated using pedestal layer to control coupling.
Silicon-on-insulator (SOI) finite-size CROWs with optimized flat-band spectrum, excellent group-delay response, and compact size are experimentally demonstrated using direct correspondence with ladder-type LC circuits. Sensitivity analysis attributes residual distortions to non-ideal fabrication rather than coupling-induced-frequency-shifts.
Summary form only given. Silicon-on-insulator technology promises improved performance for CMOS integrated circuits. Due to their unique optical properties, SOI structures offer the ability to integrate long-wavelength photonic devices into the CMOS integrated circuits. A 5/spl times/9 star coupler was fabricated with rib waveguide widths of 4 /spl mu/m and rib height of 2.0 /spl mu/m. Each waveguide...
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