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High brightness gain guided tapered lasers emitting at 1060 nm based on an asymmetric layer structure were designed, simulated and fabricated, demonstrating better beam quality than symmetric designs.
High brightness gain guided tapered lasers emitting at 1060 nm were designed, simulated and fabricated. The devices showed excellent beam quality up to 2 W cw, and the experimental results were similar to the predictions of the simulations. Tapered lasers with separate contacts were designed with the goal of achieving a high modulated power with a low modulating current.
This work present simulations of the operation of tapered semiconductor lasers with separate contacts, in comparison with the experimental results, with the goal of providing a physical understanding of the origin of this improvement. The simulation parameters related to the fabrication technology were calibrated by comparison with experiments in broad area lasers and in tapered lasers with common...
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