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High brightness gain guided tapered lasers emitting at 1060 nm based on an asymmetric layer structure were designed, simulated and fabricated, demonstrating better beam quality than symmetric designs.
A self-consistent laser simulator has been set up for the simulation of edge-emitting GaInP/AlGaInP red lasers. The modeling results have been compared with experiments in broad area 635 nm GaInP/AlGaInP laser diodes. The leakage of electrons and its dependence on the temperature and the p-doping level are analyzed.
A simulation model for tapered lasers with separated contacts has been developed. The model has been used to simulate 980 nm In-Ga-As devices with separated injection of the ridge-waveguide and taper sections. A good qualitative agreement with experimental results has been obtained. The physical origin of the observed improvements in the beam quality by stronger pumping of the ridge waveguide section...
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