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In partially depleted (PD) silicon-on-insulator (SOI) MOSFETs with thin gate oxides, a particular effect named linear kink effect (LKE) occurs, which is due to the fact that the body potential is strongly affected by majority carriers injected in the body by the electron valence-band (EVB) tunneling through the ultra-thin gate oxide. This unexpected phenomenon induces a second peak in the transconductance...
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