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In this paper, a study of the leakage current through strained p+ n Si1-xGex/Si hetero-junctions is presented. The reduction in the band gap, induced by stress forces, and the doping level at the hetero-interface, due to the use of halo implantations, are varied by changing the Ge content and the recess depth. A comparison between simulation results and experimental data is presented to analyze the...
We analysed heavily doped p+/n junctions in germanium, and found that the halos in this work provide a tradeoff between transistor channel control and junction leakage. Temperature-dependent leakage measurements show that either trap-assisted tunneling (TAT) or band-to-band-tunneling (BTBT) are the dominant leakage mechanisms for junctions with halos, (junction doping above ~ 1018 cm-3). Further,...
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