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Initial oxidation of the 6H-SiC(0001)-3x3 surface was analyzed in situ by medium energy ion scattering coupled with photoemission using synchrotron-radiation-light. The former determined the absolute quantity of adsorbed oxygen and the latter provided the fraction of each oxidation state of Si together with the surface band structure. Oxidation was performed at room temperature (RT) and 500 o...
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