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Optical characterization of a novel type of semiconductor microcavity based on a fully-buried, all-epitaxial design reveals many properties essential for a manufacturable technology. We demonstrate detailed mode-imaging, lasing, as well as a sizeable Purcell effect.
We observed highly non-thermal features from the photoluminescence of InGaAs/GaAs quantum dots in a planar microcavity. The effect was interpreted in terms of the interplay of phonon relaxation and cavity-dependent excitonic radiative recombination.
We demonstrate that the limited coherence length of a one-dimensional quasiperiodically ordered superstructure of a thin Ag film on GaAs(110) surfaces is due to structural defects. We identify dislocations, phason defects, and domain walls. The domain walls end at dislocations, whose stress field is found to induce a wide distribution of oriented phason defects.
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