Search results for: V. Maximov

Items from 1 to 20 out of 108 results

article

On the organization of receptive fields of retinal spot detectors projecting to the fish tectum: Analogies with the local edge detectors in frogs and mammals

Elena M. Maximova, Alexey T. Aliper, Ilija Damjanović, Alisa A. Zaichikova, more

Journal of Comparative Neurology > 528 > 8 > 1423 - 1435

Responses of ON‐ and OFF‐ganglion cells (GCs) were recorded extracellularly from their axon terminals in the medial sublamina of tectal retino‐recipient layer of immobilized cyprinid fish (goldfish and carp). These units were recorded deeper than direction selective (DS) ones and at the same depth where responses of orientation selective (OS) GCs were recorded. Prominent responses of these units are...

article

Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality

A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, more

Semiconductors > 2019 > 53 > 11 > 1489-1495

The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time...

article

Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots

F. I. Zubov, E. I. Moiseev, G. O. Kornyshov, N. V. Kryzhanovskaya, more

Technical Physics Letters > 2019 > 45 > 10 > 994-996

Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots, formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about 1.5 μm is formed near the side surface, which leads to a decrease in the effective current...

article

MiR‐16‐1‐3p and miR‐16‐2‐3p possess strong tumor suppressive and antimetastatic properties in osteosarcoma

Vadim V. Maximov, Rania Akkawi, Saleh Khawaled, Zaidoun Salah, more

International Journal of Cancer > 145 > 11 > 3052 - 3063

Osteosarcoma (OS) is an aggressive malignancy affecting mostly children and adolescents. MicroRNAs (miRNAs) play important roles in OS development and progression. Here we found that miR‐16‐1‐3p and miR‐16‐2‐3p “passenger” strands, as well as the “lead” miR‐16‐5p strand, are frequently downregulated and possess strong tumor suppressive functions in human OS. Furthermore, we report different although...

article

Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels

N. Yu. Gordeev, A. S. Payusov, M. V. Maximov

Semiconductors > 2019 > 53 > 10 > 1405-1408

The construction of a semiconductor laser with a stripe waveguide is proposed, the geometry of which can make it possible to obtain radiation similar to that of a phase-locked laser array. The requirements for the parameters of the laser quasi-array and the technological feasibility of the proposed approach are discussed.

article

Letter of interest for a neutrino beam from Protvino to KM3NeT/ORCA

A. V. Akindinov, E. G. Anassontzis, G. Anton, M. Ardid, more

The European Physical Journal C > 2019 > 79 > 9 > 1-14

The Protvino accelerator facility located in the Moscow region, Russia, is in a good position to offer a rich experimental research program in the field of neutrino physics. Of particular interest is the possibility to direct a neutrino beam from Protvino towards the KM3NeT/ORCA detector, which is currently under construction in the Mediterranean Sea 40 km offshore Toulon, France. This proposal is...

article

Energy Consumption for High-Frequency Switching of a Quantum-Dot Microdisk Laser

A. E. Zhukov, E. I. Moiseev, N. V. Kryzhanovskaya, F. I. Zubov, more

Technical Physics Letters > 2019 > 45 > 8 > 847-849

We have studied characteristics of a 23-μm-diameter microdisk laser operating in a regime of direct high-frequency modulation at a stabilized heat-sink temperature of 18°C. It is found that the minimum energy consumption in this regime amounts to ~1.6 pJ/bit and is achieved at a modulation frequency of 4.2 GHz. The maximum modulation frequency is 6.7 GHz, at which the minimum energy consumption is...

article

Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation

A. E. Zhukov, E. I. Moiseev, N. V. Kryzhanovskaya, S. A. Blokhin, more

Semiconductors > 2019 > 53 > 8 > 1099-1103

Microdisk lasers 10–30 μm in diameter operating at room temperature without thermal stabilization and with an active region based on nanostructures of hybrid dimensionality—quantum wells–dots—are investigated. High-frequency measurements of the microlaser response are performed in the direct small-signal modulation mode, which makes it possible to establish the parameters of the operating speed and...

article

Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges

A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, Yu. M. Shernyakov, more

Technical Physics Letters > 2019 > 45 > 2 > 163-166

The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current density (160 and 125 A/cm²), high internal quantum efficiency (74 and 85%), and low internal losses (1.1...

article

A Diode-Based Detector of Fast Neutral Atoms at a Gas Dynamic Trap

E. I. Pinzhenin, V. V. Maximov, I. B. Chistokhin

Instruments and Experimental Techniques > 2019 > 62 > 2 > 185-192

— A multichannel diagnostic unit for charge-exchange atoms was created at the Gas Dynamic Trap to study fast ions with energies in the thermonuclear range, which are produced during high-power atomic injection. Two detection systems based on the pinhole camera principle were developed to observe the radial distribution of the emission of charge-exchange atoms. AXUV16ELG semiconductor photodiodes,...

article

Effect of carrier properties on the activity of supported KCoMoS catalysts in the synthesis of alcohol from syngas

Yu. V. Anashkin, D. I. Ishutenko, V. V. Maximov, A. A. Pimerzin, more

Reaction Kinetics, Mechanisms and Catalysis > 2019 > 127 > 1 > 301-314

The influence of catalyst support properties on activity of KCoMoS samples supported on commercially available carriers (Al₂O₃, SiO₂, TiO₂, ZrO₂) was studied in the process of synthesis of alcohols from syngas in a bench-scale flow reactor. Supports and catalysts were characterized using low-temperature nitrogen adsorption, temperature-programmed ammonia desorption, high-resolution transmission electron...

article

Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance

N. Yu. Gordeev, A. S. Payusov, I. S. Mukhin, A. A. Serin, more

Semiconductors > 2019 > 53 > 2 > 200-204

A post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.

article

Updated functional segregation of retinal ganglion cell projections in the tectum of a cyprinid fish—further elaboration based on microelectrode recordings

Alexey T. Aliper, Alisa A. Zaichikova, Ilija Damjanović, Paul V. Maximov, more

Fish Physiology and Biochemistry > 2019 > 45 > 2 > 773-792

Single-unit responses of retinal ganglion cells (GCs) were recorded extracellularly from their axonal terminals in the tectum opticum (TO) of the intact fish (goldfish, carp). The depths of retinal units consecutively recorded along the track of the microelectrode were measured. At the depth of around 50 μm, the responses of six types of direction-selective (DS) GCs were regularly recorded. Responses...

article

A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers

F. I. Zubov, M. E. Muretova, L. V. Asryan, E. S. Semenova, more

Semiconductors > 2018 > 52 > 14 > 1905-1908

A search for materials suitable for implementation of 1.55 µm Al-free diode lasers based on InP with asymmetric barrier (AB) layers is conducted. It is shown that a very high (over 10⁶) suppression ratio of the parasitic electron flux can be achieved using common III–V alloys for the ABs. Hence placing such ABs in the immediate vicinity of the active region should completely suppress the parasitic...

article

Diode Lasers with Near-Surface Active Region

A. S. Payusov, N. Yu. Gordeev, A. A. Serin, M. M. Kulagina, more

Semiconductors > 2018 > 52 > 14 > 1901-1904

Edge-emitting diode lasers with shallow location of a quantum-well active region at a depth of 0.92 μm were developed and their thermal resistance was evaluated from the analysis of true spontaneous emission spectra through the top contact window. Owing to a close spacing between the active region and laser heatsink, effective heat removal is achieved under continuous wave operation that is characterized...

article

Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers

L. V. Asryan, F. I. Zubov, Yu. S. BalezinaPolubavkina, E. I. Moiseev, more

Semiconductors > 2018 > 52 > 12 > 1621-1629

A self-consistent model for calculating the threshold and high-power characteristics of semiconductor quantum well lasers with asymmetric barrier layers is developed. The model, which is based on a system of rate equations, uses the universal condition of global charge neutrality in the laser structure. The electron and hole concentrations in the waveguide region and in the quantum well (QW) and the...

article

Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides

A. E. Zhukov, N. Yu. Gordeev, Yu. M. Shernyakov, A. S. Payusov, more

Semiconductors > 2018 > 52 > 11 > 1462-1467

The results of studying edge-emitting quantum-well lasers with a layered design having coupled planar waveguides, capable of suppressing the generation of excited transverse modes, are presented. In this case, a low internal loss (0.4 cm^–1) is provided, combined with a small depth (~0.9 μm) of the active region, which results in a low thermal resistance of 6.0 (K/W) mm without a submount.

article

Gradual Evolution From Quantum‐Well‐Like to Quantum‐Dot‐Like Characteristics in InGaAs/GaAs Nanostructures

Alexey M. Nadtochiy, Mikhail V. Maximov, Sergey A. Mintairov, Nikolay A. Kalyuzhnyy, more

physica status solidi (b) > 255 > 9 > n/a - n/a

Dense arrays of carrier localizing indium‐rich regions (referred to as quantum well‐dots, QWDs) formed inside an indium‐depleted residual quantum well by metalorganic vapor phase epitaxial deposition of 4–16 monolayers (ML) of In_xGa_1−xAs (0.3 < x < 0.5) on 6° misoriented GaAs (100) substrates are studied. It is shown that in addition to QWDs the deposited layers may contain other objects with...

article

Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters

S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov, more

Semiconductors > 2018 > 52 > 10 > 1249-1254

GaAs photovoltaic converters containing quantum well-dot (QWD) heterostructures are studied. The QWD properties are intermediate between those of quantum wells (QWs) and quantum dots. The QWDs are obtained by the epitaxial deposition of In_0.4Ga_0.6As with a nominal thickness of 8 single layers by metal-organic vapor phase epitaxy. QWDs are a dense array of elastically strained islands that localize...

article

Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates

M. V. Maximov, A. M. Nadtochiy, Yu. M. Shernyakov, A. S. Payusov, more

Semiconductors > 2018 > 52 > 10 > 1311-1316

The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In_0.4Ga_0.6As/In_0.2Ga_0.8As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In_0.2Ga_0.8As/In_0.2Al_0.3Ga_0.5As short-period superlattices makes...

Publication date

Set your own date range

Content availability

Available (104)
None (4)

Publication type

article (100)
book (8)

INFONA - science communication portal

Search results for: V. Maximov

On the organization of receptive fields of retinal spot detectors projecting to the fish tectum: Analogies with the local edge detectors in frogs and mammals

Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality

Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots

MiR‐16‐1‐3p and miR‐16‐2‐3p possess strong tumor suppressive and antimetastatic properties in osteosarcoma

Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels

Letter of interest for a neutrino beam from Protvino to KM3NeT/ORCA

Energy Consumption for High-Frequency Switching of a Quantum-Dot Microdisk Laser

Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation

Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges

A Diode-Based Detector of Fast Neutral Atoms at a Gas Dynamic Trap

Effect of carrier properties on the activity of supported KCoMoS catalysts in the synthesis of alcohol from syngas

Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance

Updated functional segregation of retinal ganglion cell projections in the tectum of a cyprinid fish—further elaboration based on microelectrode recordings

A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers

Diode Lasers with Near-Surface Active Region

Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers

Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides

Gradual Evolution From Quantum‐Well‐Like to Quantum‐Dot‐Like Characteristics in InGaAs/GaAs Nanostructures

Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters

Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates

Filter options

Publication date

Content availability

Publication type

Keywords

Data set

Journal

INFONA - science communication portal

Search results for: V. Maximov

Add recipient

Sending message cancelled

Are you sure you want to cancel sending this message?

Send message

Filter options

Publication date

Date range setting

Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.

Content availability

Publication type

Keywords

Data set

Journal

Reporting an error / abuse

Sending the report failed

Accessibility options