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For low-pressure gas discharges, fluid modeling without considering the fluid dynamics is often considered to be valid. However, as the pressure rises, fluid dynamics becomes important in affecting the gas discharges. Therefore, a thorough simulation of atmospheric-pressure plasma jets (APPJ) needs to consider two parts, the gas flow model (GFM) and the plasma fluid model (PFM). There have been very...
A parallel 2D axisymmetric fluid model for simulating fluorocarbon (CF4) gas discharge in a dome-shaped inductively couple plasma source (ICPs) used for etching SiO2 under pressure of 20 mTorr is reported. Etching of SiO2 is an important fabrication process in semiconductor industry. Thus, etching rate and selectivity of SiO2 over Si are of extreme importance during etching. In our models, a set of...
In past two decades, modern industrial fabrication processes of semiconductors strongly rely on the plasma source generated by very high frequency power because of its benefits of high deposition and etching rates. In addition, large plasma chamber is needed in order to increase the production capacity. However, the underlying physics associated with high frequency power and large-scale plasma source...
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