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CuInSe 2 (CIS) thin films were prepared by ion beam sputtering deposition of copper layer, indium layer and selenium layer on BK7 glass substrates followed by annealing at different temperatures for 1h in the same vacuum chamber. The influence of annealing temperature (100–400°C) on the structural, optical and electrical properties of CIS thin films was investigated. X-ray diffraction (XRD)...
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