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This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (Vgst) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility-fluctuation origin 1/f noise for the strained device in the high-|...
We have investigated the low frequency noise characteristics for uniaxial strained PMOSFETs. In the low |Vgst| regime, the 1/f noise is dominated by the carrier-number-fluctuations and the SId/Id2 is increased by the enhanced gm/Id for the strained device. Nevertheless, the SId/Id2 of the strained device is almost the same as the unstrained one at a given gm/Id. Furthermore, with the application...
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