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Emerging non-volatile memories (NVM) such as STT-MRAM and OxRRAM are under intense investigation by both academia and industries. They are based on resistive switching mechanisms and promise advantageous performances in terms of access speed, power consumption and endurance (i.e. >1012), surpassing mainstream flash memories. This paper presents a non-volatile full-adder design based on complementary...
As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Single Event Effects in circuitry surrounding OxRRAMs. The impact of a particle crossing the circuit is presented. A threshold effect is pointed out even if the probability of SEE occurrence is shown to be low in common technologies.
To ensure reliability of EEPROM devices, it is significant to monitor the evolution of the memory array threshold voltage (VT) distribution. In this work, impact of endurance and retention tests is evaluated on EEPROM VT distributions. To track accurately the evolution of the VT distribution, an innovative experimental plan is setup and experimental results are deeply analyzed.
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