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Semiconductor quantum well structures based on InGaN/GaN materials are characterized by the piezoelectric and spontaneous polarizations. At high level of excitations, fields caused by the polarizations are screened by carriers confined in quantum wells. In our work, we consider additional effect in multiple-quantum wells caused by Coulomb interactions of carriers positioned in neighboring quantum...
Design of the electron injector influences the threshold current, dynamic characteristics and efficiency of quantum cascade lasers. We aim to determine the impact of the position-dependent effective mass on transmissivity of the injector in quantum-cascade laser.
It is found a new class of heterostructures named as continuous band heterostructures (CBHs), for which discontinuity for one of bands is zero. Requirements of lattice matching and zero discontinuity produces three classes of possible solutions for material compounds are possible: point solutions for binary/quaternary and ternary/ternary heterojunctions, line solutions for ternary/quaternary and area...
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