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We present the theoretical analysis of resonance quantum cascade photodetector based on GaN/AlGaN compound. Calculation of reflection, transmission spectra and optical quantum efficiency was made by semianalytical methodic.
Semiconductor quantum well structures based on InGaN/GaN materials are characterized by the piezoelectric and spontaneous polarizations. At high level of excitations, fields caused by the polarizations are screened by carriers confined in quantum wells. In our work, we consider additional effect in multiple-quantum wells caused by Coulomb interactions of carriers positioned in neighboring quantum...
In this work, the simulation of the 980 nm InGaAs intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers (ICOC VCSELs) with separated triplets of quantum wells (STQW) is presented. We analyze the thermal, electrical and optical properties of such devices. Results of simulations show the larger optical power efficiency and higher modulation bandwidth for devices with included...
A theoretical analysis of the optical absorption and quantum efficiency (QE) in a resonant cavity enhanced InGaAs/GaAs P-i-n photodetector (RCE PD) is presented. Using anomalous dispersion (AD) mirror flattopped QE spectrum is obtained. The influence of the thickness and position of AD layer on the optical absorption and QE is shown and design with a maximum QE of 92.5% and 6 nm spectral flattop is...
We present a theoretical analysis on the optical absorption and quantum efficiency (QE) of a resonant cavity enhanced InGaAs/GaAs P-i-n photodetector (RCE PD). The QE is calculated by using transfer matrix method that includes the structural parameters of the RCE PD and takes into account the standing wave effect and a energy conservation law is offered. Using anomalous dispersion (AD) mirror flattopped...
Design of the electron injector influences the threshold current, dynamic characteristics and efficiency of quantum cascade lasers. We aim to determine the impact of the position-dependent effective mass on transmissivity of the injector in quantum-cascade laser.
We have found the couples of heterogeneous semiconductor materials without band offsets in both conduction and valence bands, and with the different electron effective masses. Electron affinity rule has been applied for band offsets calculation. We have used the second order interpolation formulas to obtain material parameters of semiconductor alloys. The couples of semiconductors have been found...
We found a new class of heterostructures which have no discontinuities for one of the band edges and, therefore, called continuous-band heterostructures (CBHs). The promising properties of CBHs are discussed by consideration of their optical and electrical characteristics. CBH-based DBRs provide extremely low series resistance in comparison with conventional DBRs even at low level of doping that can...
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