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In this paper, we propose an analytical model for read stability metric (read margin) of sub-45nm SRAM cells. First, analytical expressions for Vread and Vtrip of the cell are derived. The expressions are obtained using a simple model for the I-V characteristics of the transistors valid for sub-45nm technologies. The I-V model, which is based on the n-th power model, has integer powers of voltage...
The main purpose of the paper is to present sophisticated means to implement Q-guidance scheme in satellite injection missions. Optimality and simplicity of Q-guidance approach makes it appropriate for practical settings of a wide range of launch systems. Calculation of required velocity as a fundamental and inherent concept of Q-guidance implementation for orbital injection missions has been proposed...
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