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SAW type structures for an operating frequency of about 2.8 GHz and 3.2 GHz have been successfully developed on a thin A1N layer sputtered on high resistivity silicon. Nanolithography was used to manufacture the interdigitated transducer. Fingers and interdigits 300nm and 150nm have been manufactured. A thinner metalization on the IDT will contribute to improve the frequency performances of the devices...
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