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A fully integrated 60 GHz transmitter in 130 nm BiCMOS SiGe technology for outdoor applications is presented. The transmitter covers the entire 57–66 GHz band supporting a record data rate of 16.2 Gbps at 6 dBm output power, 512 QAM with an EVM of −34 dB. The single ended saturated power, OP1dB, and OIP3 are above 18 dBm, 16 dBm and 23 dBm respectively. The transmitter meets the most stringent ETSI...
A compact frequency octupler designed for upper and lower E-band transceivers is implemented in IBM 0.13μm SiGe technology. Three frequency doubler stages are used with harmonic rejection conducted at the first two doublers for wide band spectral purity. With a 0 dBm input power, the frequency octupler reaches above 7.5 dBm output power between 56 GHz to 84 GHz with a peak output power of 13.5 dBm...
A compact frequency tripler designed for 60 GHz transceivers is implemented in 0.13µm SiGe technology. The common emitter class-A frequency tripler uses a transformer based output filter combined with transmission lines to achieve high harmonic suppression. The frequency tripler followed by an amplifier covers a 3dB frequency range between 48 GHz to 58 GHz with a peak output power of 9.5 dBm. Fundamental...
This paper describes circuit design and measurement results of a multi-tanh bipolar rms power detector (PD) for applications in E band (65–86 GHz) frequency range. The PD is designed and fabricated in IBM 0.13um SiGe technology. In the matched frequency range, the measured input dynamic range is over 40 dB, withstanding an input power of 17dBm, with an overall sensitivity of 27.5 mV/dB. The output...
A compact ×2 frequency multiplier covering all ku band is implemented in IBM 0.13μm SiGe technology. The transformer coupled circuit uses a common base configuration working in B- class mode and utilizes transmission lines properties to achieve harmonic suppression. The doubler covers a 3dB frequency range between 12.2 GHz to 20.4 GHz with a saturated output power above 9 dBm. The fundamental frequency...
An IF to RF up-conversion mixer for the entire E-BAND 71–76GHz and 81–86GHz frequency range was designed and fabricated in IBM 0.12μm SiGe technology. The Mixer comprises of a double balanced Gilbert-cell with a degeneration inductor in the amplifying stage for increased linearity. The mixer exhibits conversion gain higher than −2dB, output compression point above −7dBm, and LO leakage less than −30dB...
An RF to IF down-conversion mixer for the upper 81–86GHz E-BAND frequency range was designed and fabricated in IBM 0.12µm SiGe technology. The Mixer comprises of a double balanced Gilbert-cell in which the RF signal is driven through a marchand balun into the common base amplifying mixer stage. The mixer exhibits conversion gain of 7dB, SSB noise figure of 12dB and input compression I1dBCP of −10dBm...
The results show good agreement between de-embedded measurement and T- line coplanar model in both S-parameters and in Zo representation. In all cases the results of the T-line coplanar model are very close to the corresponding results of the EM solver. The RC model deviates significantly in the frequency domain from the T-line coplanar model results - both in S- parameters and in -Zo representation...
In this work we present an approach based on device level parameters where the biasing of the circuits is predetermined from the source design properties thereby ensuring biasing conditions of the remapped circuit. This approach allows the designer to have complete control over the electrical properties of the design enabling fast and accurate convergence to design target requirements. The computational...
Silicon technology on-chip single and coupled coplanar transmission lines have been measured on wafer up to 50 GHz. De-embedding was performed using various methods including the L-2L technique [1,2] by measuring two transmission lines of original and double length. A novel approach has been used for the measurement of the coupled structures using conventional two port VNA. Results are investigated...
We present an InP HBT distributed amplifier with a bandwidth of 75 GHz, gain of 14 dB, and power consumption of 78 mW. The HBTs had a 600 nm thick collector, and hence relatively low fT and fMAX of 84 GHz and 150 GHz respectively. The thick collector is a tradeoff required in optoelectronic integrated receivers, in which the PIN diode layers are the same as the base collector layers. To obtain high...
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