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In this letter, we report a solution-processed hafnium indium zinc oxide (HIZO) thin-film transistors (TFTs) with an Al-doped ${\rm ZrO}_{2}$ (AZO) gate dielectric. The AZO thin films were identified as an amorphous phase up to the annealing temperature of 600$^{\circ}{\rm C}$ and had a smooth surface with root-mean-square roughness of ${<}{\rm 0.35}~{\rm nm}$ . The relative dielectric constant...
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