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In this paper we present a versatile nanodamascene fabrication process for the realization of low power nanoelectronic devices. This process has been exploited for the fabrication of metal/insulator/metal junctions, metallic single electron transistors, silicon tunnel field effect transistors, and planar nanometric resistive memories. Due to its low thermal budget, and materials, this technology is...
This presentation will address the potential of nanoelectronic devices 3D monolithic integration in the CMOS back-end-of-line (BEOL) to add functionality and enhance integrated circuits (ICs) performances.
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