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Low temperature GaAs grown by an MBE system exhibiting Hall carrier mobility of 5000 cm2/v.s. is fabricated into continuous-wave (CW) Terahertz (THz) photomixers utilizing a dual-dipole antenna with an interdigitated feed structure. The characteristics of the CW THz photomixer are presented.
In this letter, a junction varactor is presented with a large capacitance tuning range, while providing very high linearity. Such varactors are extremely useful in adaptive RF applications, which directly benefit from passive components with high tuning range and high linearity. Using a preproduction GaAs process technology and third-order intermodulation (IM3) cancellation techniques, a very linear...
The last decade has seen GaAs HBTs emerge as the dominant technology in wireless handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of depletion mode n-FET and GaAs HBT. The merger of bipolar and FET, or BiFET, gives an additional degree of freedom in the design of advanced power amplifiers independent of a silicon...
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