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This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4 dB, input and output matching lower then -8.5 dB and -14.5 dB, and a minimum NF of 4.0 dB can be achieved, while the power consumption...
In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18 um standard RF CMOS process. The LNA gives 13.66 dB maximum...
In this paper a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.65dB maximum power gain...
In this paper a high gain, low power, low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with capacitor-coupling resonated load and it is fabricated in UMC 0.18um standard RF CMOS process. The LNA gives 10.3dB gain and 1.8GHz 3dB bandwidth (3.1 – 4.9GHz) while consuming only 2.39mW through...
In this paper a low power and low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, two stages common-source amplifier with inductive resonated load and an output buffer for measurement purpose; it is fabricated in TSMC 0.18um standard RF CMOS process. The measured UWB LNA gives 12.0dB gain and 8.0GHz 3dB bandwidth...
This paper presents a common gate low-power low noise amplifier (LNA) for DS-UWB Low-band and MB-OFDM Group-A ultra-wideband radio system. The LNA is designed and implemented in 0.18um RF CMOS process. Simulation results show that power gain of 15.4dB, input and output matching lower than -10.6dB and -13.3dB, and a minimum NF of 3.8dB can be achieved, while the power consumption is only 3.24 mW through...
A 10-bit folded multi-LSB decided resistor string DAC is presented. The proposed circuits uses the LSBs of the input digital words to decide the output voltage, which can significantly reduce the number of unit resistors up to 75% compared with the traditional resistor string DAC. The measured results show that the INL is less than 0.73 LSB and the maximum DNL is 0.26 LSB. The active chip area is...
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