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Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested...
AFM, Raman spectroscopy, FTIR spectroscopy and Hall effect measurements were used to analyze nanocrystalline diamond film. The surface structure and conductivity as well as CH stretching bonds of the film was demonstrated.
The effects of annealing process on the electrical conductivity and mechanical properties of Cu-Te alloys were studied via AG-10TA electronic universal machine, SB2230 digital electric bridge, SEM and EDS. The results show that recrystallization and precipitation occur simultaneously during the annealing process of Cu-Te alloys. Tellurium precipitates as Cu 2 Te second phase. The grain size...
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