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The Cd1-xZnxTe films with a high x value of about 0.42 were achieved by close-spaced sublimation (CSS) method using a pre-alloyed CdZnTe source on the basis of two critical growth factors. A relatively high growth temperature is one of two key factors to achieve high Zn content in CdZnTe films. The x value of Cd1-xZnxTe varies from 0.10 to 0.42 as the substrate temperature changes from 100 to 500 °C...
We report the semiconducting behavior at room temperature and a metal-semiconductor transition (MST) at lower temperature in copper sulfides (Cu x S) thin films. Cu x S thin films, deposited by direct magnetron sputtering technique, are found to be of CuS-Cu 1.8 S mixed phase by XRD. The deposited films exhibit low electrical resistivity close to ∼10 −4 Ω cm at room...
High resistivity (3 × 10 9 Ω cm) polycrystalline CdZnTe thick films with thickness of 25 μm–150 μm were grown on SnO 2 : F-coated glass substrates by close-spaced sublimation method. The properties of polycrystalline CdZnTe films were studied by XRD, SEM and EDS, respectively. A CdZnTe film Schottky diode detector was also fabricated and investigated using current–voltage and capacitance–voltage...
The characteristics of the Au contacts deposited by three different processes before and after accelerating aging tests have been investigated in this paper. The experimental results indicate that the aging tests can cause the degradation of the contact interfacial properties, such as continuities, adhesion strength and ohmic characteristics, especially for the contact electrode deposited by the thermal...
The method of the electrode deposition process plays a vital role in determining the contact characteristics, which is often one of the dominant factors influencing the CdZnTe detector performance. In this work, a modified deposition process named two-step process for the electrode fabrication of CdZnTe detectors, was developed. This deposition process can dramatically increase the adhesion strength...
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