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We report on the development of metallic source and drain module for FDSOI MOSFETs including lateral salicidation of the channel edges and dopant segregation technique. Metal barrier type (TiN or Ti/TiN), optimized doping conditions, controlled PtSi penetration below spacers and suitable cleaning of the silicide surface lead to very low specific contact resistivity values (down to 0.1 Ωμm2). We thus...
We report on the development of a metallic source and drain module for FDSOI pMOSFETs including lateral PtSi formation, Ti/TiN barrier, optimized doping conditions, controlled PtSi penetration below spacers and suitable cleaning of the PtSi surface prior to barrier deposition. Mean specific contact resistivity values lower than 2 Omega mum2 have been achieved, which leads to highly performant pMOSFET...
We report in this paper the fabrirication and the characterirization of FDSOI pMOSFETs with metallic source and drain exhibiting the best performance obtained so far on metallic source/drain devices, with Ion=345 nA/mum and Ioff=30 nA/mum at -1 V for a 50 nm gate length device. These results have been achieved thanks to a careful optimization of the source/drain to channel contacts, which can allow...
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