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We hereby report the fabrication, electrical characterization and TCAD simulation of planar Single and Double Gate n-and p-MOSFETs with metallic Dopant Segregated Source and Drain (DSS) on SOI, with gate lengths down to 20 nm. A wide range of experimental data for various device architectures (Single Gate, Single Gate on Ultra Thin Buried Oxide, Double Gate), S/D metallizations (Pt, Ni, Er, Yb), and...
This work reports on gate voltage dependent source and drain series resistance and associated barrier height in modified double gate Schottky MOSFETs with dopant segregation. We show that in our devices the series resistances is significantly reduced by lowering the Schottky barrier height (SBH). The series resistance and the barrier have been extracted using an external series resistance method and...
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