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This paper reports the fabrication of n-type MOSFET using Si3N4 as dielectric on the same wafer as ISFET for ISFET characterization. The paper presents the fabrication, simulation and characterization of metal-oxide field-effect transistor (MOSFET). The gate of the ISFET is stacked with Si3N4 sensing membrane layer that has been deposited using LPCVD system to cover the gate area. Output and transfer...
In this paper we study the circuit design implications of Ge vs. Si PMOS FinFETs at the 10 and 7nm nodes, using TCAD calibrated statistical compact models and the ARM predictive benchmarking flow. The ARM predictive flow incorporates advanced-node-relevant layouts, design rules, parasitic RC extraction and wire-loading. We present the first comprehensive simulation study evaluating Ge pFinFETs in...
Highly CPU intensive serial task when run on parallel architecture, OS does the Core switching of the given task. Mainly the task is executed by one core at a time, but both the cores are used for processing when core (currently executing) usage reaches 100%. In this scenario OS switches the task between cores. In this paper an attempt has been made to study the time taken to process a segment of...
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