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Impact of structure geometry and bulk traps on the performance of the n++GaN/InAlN/AlN/GaN high electron mobility transistor (HEMT) using two-dimensional Sentaurus TCAD simulation tool were investigated. Simulations were performed by the electrophysical models calibrated on real devices. The results indicate a significant influence of both acceptor and donor traps on device switching characteristics.
Vertical and horizontal current sensors based on magnetic force sensing are presented. The proposed sensors are to be used for switched current testing in power devices with high switched currents above amperes. Novel vertical magnetic sensing structures present the advantage of elimination of the undesired voltage reduction and compatibility with the power device control electronics. Various modifications...
Power devices current sensors based on magnetic force of is presented. The proposed sensors are aimed to be used for switched current testing in power devices with high switched currents above amperes. The advantage of the proposed monitors is in elimination of the undesired voltage reduction and compatibility with the power device control electronics. Description of horizontal and novel vertical...
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