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The influences of RE alloying additions (Y, Gd, Tb and Dy) on the microstructure, thermal stability and crystallization behavior of melt spun Fe80.65Cu1.35Si2B14RE2 alloys have been systematically investigated. Substituting 2at% iron atoms by rare earth elements significantly improve the amorphous forming ability and thermal stability of the alloys. The primary crystallization temperatures are increased...
For the first time, after considering the thermodynamic properties (evaluated by the molar Gibbs energy of oxide formation, DeltaOxideG) and the electronegativity (chi) for both the dopants (via ion implantation, thin capping layer or co-deposition) and host materials in the gate stack, a practical model to understand the effective work function (EWF) modulation induced by various dopants is proposed...
The physical and electrical characteristics of high-k (HK) gate dielectric HfLaO were systematically investigated. Incorporation of La in HfO2 can raise the film crystallization temperature from 400degC to 900degC. Moreover, NMOSFETs fabricated with HfLaO gate dielectric exhibit superior electrical performances in terms of threshold voltage (Vth), bias temperature instability (BTI), channel electron...
In this work, by using a novel HfLaO high-kappa (HK) gate dielectric, we show for the first time that with a thermal budget of 1000 degC, Fermi-Pinning in the HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or...
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