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In this work, by using a novel HfLaO high-kappa (HK) gate dielectric, we show for the first time that with a thermal budget of 1000 degC, Fermi-Pinning in the HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or...
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