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In this work, we investigate the hydroxyl group effect on hysteresis of the low voltage organic thin film transistor (OTFT). A high k material, hafnium oxide, is utilized as gate dielectric to reduce OTFT operational voltage. By using the hydroxyl-free polymer, polystyrene, the hydroxyl groups on hafnium oxide surface will be shielded. The modification at semiconductor/dielectric interface prevents...
In this article, a low voltage organic thin-film transistor (OTFT) was accomplished by using a random copolymer, poly(styrene-co-methyl methacrylate) (PS-r-PMMA), as the gate dielectric. The thickness of PS-r-PMMA polymer can be controlled well by thermal process and shows an ultra-thin property after toluene rinse. The thickness of PS-r-PMMA can be controlled in the range of 2–14nm. By the densely...
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