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Thermal stability of the Ru/β-silicon carbide (SiC) interfaces up to 800 o C is investigated using secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS) and glancing incidence X-ray diffraction (GIXRD) studies. The objective of this work is to assess the potentiality of ruthenium to be used as a stable gate metal of the Schottky junction gas sensors working at...
The Pd/β-SiC interfaces were studied using secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS). This was done with the intent of clarifying any reaction or inter-diffusion at the interface upon prolonged annealing at different temperatures in air. SIMS study indicates that the interface is stable up to 400 o C for at least 12h. However, at 800 o ...
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