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It is shown in this work that the presence of an ultrathin (~1.5nm) SiO 2 interfacial layer reactively formed in between a thick (~20nm) high-permittivity CeO x film and a metal NiSi 2 bottom electrode in a metal–insulator–metal structure has remarkable consequences for the hysteretic current–voltage (I–V) characteristic of the device. Conductance values in the low resistance...
Effects of surface passivation and the interfacial layer on the reliability characteristics of Al/HfYO x /GaAs metal-oxide-semiconductor capacitor structures are reported. Stress-induced leakage current mechanism, critical for understanding the degradation and breakdown in Al/HfYO x /GaAs capacitors, has been studied in detail. While the devices fabricated with (NH 4 ) ...
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