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To resolve the parasitic problems and to fully leverage the superiority of GaN‐based high electron mobility transistors, monolithic integration of different function blocks is a promising solution. The enhancement mode (E‐mode) GaN‐based p‐channel heterostructure field‐effect transistor (p‐HFET) is one of the key components. Herein, the threshold voltage (VTH) is modeled, and the influence of the...