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We have theoretically estimated optical isolation of larger than 30dB in Co-InGaAsP semiconductor active optical isolators based on nonreciprocal phase shift. The length of the nonreciprocal phase shifting region is as short as 1.3mm.
TM-mode waveguide optical isolators consisting of semiconductor waveguides with ferromagnetic MnX (X=As, Sb) layers were developed. The device with a MnSb layer had an isolation ratio of 12 dB/mm in the wavelength range 1530–1555 nm.
We have theoretically estimated optical isolation of larger than 30 dB in Co-InGaAsP semiconductor active optical isolators based on nonreciprocal phase shift. The length of the nonreciprocal phase shifting region is as short as 1.3 mm.
TM-mode waveguide optical isolators consisting of semiconductor waveguides with ferromagnetic MnX (X = As, Sb) layers were developed. The device with a MnSb layer had an isolation ratio of 12 dB/mm in the wavelength range 1530-1555 nm.
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