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A surface-emitting GaAlAs/GaAs laser is fabricated using ion milling to etch the mirrors. Output light is defected to a direction perpendicular to the wafer surface by a monolithically integrated 45? mirror.
Schottky barrier and oxide-restricted ridge-waveguide large optical cavity (LOC) arrays were fabricated and tested. Both evanescently coupled and diffraction-coupled array geometries were evaluated in terms of lateral and transverse mode behaviour. The array stripes were 3 ?m wide, with a separation of 4.5, 6, 7.5 and 9 ?m from centre to centre. Peak powers of over 2W were obtained for 11-element...
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